Volume 1, Issue 1 (April 2016)

Original research papers

Radiation Effects


Jozef Huran, Ladislav Hrubčín, Pavel Boháček, Sergey B. Borzakov, Vladimir A. Skuratov, Alexander P. Kobzev, Angela Kleinová, Vlasta Sasinková

Pages: 14-19

DOI: 10.21175/RadJ.2016.01.03

Received: 14 MAR 2015, Received revised: 20 APR 2015, Accepted: 24 APR 2015, Published Online: 28 APR 2016

Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) films were deposited on p-type Si(100) substrates at various deposition conditions by means of plasma enhanced chemical vapor deposition (PECVD) technology using silane (SiH4) methane (CH4) and ammonium (NH3) gas precursors. The concentration of elements in films was determined by RBS and ERD analytical method simultaneously. Chemical compositions were analyzed by FT-IR and Raman spectroscopy. The current-voltage (I-V) characteristics of structures before and after Xe ion and neutron irradiation were measured.
  1. D. Pysch et al., “Potentials and Development of Amorphous Silicon Carbide Heterojunction Solar Cells,” Proc. 34th IEEE Photov. Spec. Conf., Philadelphia (PA), USA, 2009, pp. 794-799.
    DOI: 10.1109/PVSC.2009.5411165
  2. S. Janz, S. Reber and W. Glunz, “Amorphous SiC: Applications for Silicon Solar Cells,” Proc. 21st EUPVSEC, Dresden, Germany, 2006, pp. 660-663.
  3. T.A. Pomorski, B.C. Bittel, C.J. Cochrane, P.M. Lenahan, J. Bielefeld and S.W. King, “Defects and Electronic Transport in Hydrogenated Amorphous SiC Films of Interest for Low Dielectric Constant Back End of the Line Dielectric Systems,” J. Appl. Phys., vol. 114, p. 074501, 2013.
    DOI: 10.1063/1.4818480
  4. S.W. King et al., “Influence of Network Bond Percolation on the Thermal, Mechanical, Electrical and Optical Properties of High and Low-k a-SiC: H Thin Films,” J. Non-Crystal. Solids, vol. 379, pp. 67–79, Nov. 2013.
    DOI: 10.1016/j.jnoncrysol.2013.07.028
  5. W. Daves, A. Krauss, N. Behnel, V. Häublein, A. Bauer and L. Frey, “Amorphous Silicon Carbide Thin Films (a-SiC:H) Deposited by Plasma-Enhanced Chemical Vapor Deposition as Protective Coatings for Harsh Environ-ment Applications,” Thin Solid Films, vol. 519, pp. 5892-5898, Jul. 2011.
    DOI: 10.1016/j.tsf.2011.02.089
  6. A.M. Wrobel, A. Walkiewicz-Pietrzykowska and P. Uznanski, “Remote Hydrogen Microwave Plasma Chemical Vapor Deposition from Methylsilane Precur-sors. 1. Growth Mechanism and Chemical Structure of Deposited a-SiC:H Films,” Thin Solid Films, vol. 564, pp. 222-231, Aug. 2014.
    DOI: 10.1016/j.tsf.2014.04.087
  7. 刘贵昂,谢二庆,王天民, “a-SiC: H薄膜的中子辐照研究,” Qiangjiguang Yu Lizishu, 第 15卷 第 3期 2003年 3月. (G.A. Liu, E.Q. Xie and T.M. Wang, “Irradiation Effect of Neutrons on a-SiC:H Films,” High Pow. Las. Part. Beams, vol. 15, no.3, pp. 271-274, Mar. 2003.)
  8. A. Gali, P. Deák, P. Ordejón, N. T. Son, E. Janzén and W. J. Choyke, “Aggregation of Carbon Interstitials in Silicon Carbide: A Theoretical Study,” Phys. Rev., vol. B 68, pp. 125201 (11), Sep. 2003.
    DOI: 10.1103/PhysRevB.68.125201
  9. A.P. Kobzev, J. Huran, D. Maczka and M. Turek, “Investi-gation of Light Element Contents in Subsurface Layers of Silicon,” Vacuum, vol. 83, supl.1, pp. S124-S126, May, 2009.
    DOI: 10.1016/j.vacuum.2009.01.042
  10. S.F. Yoon and J. Ahn, “Electron Cyclotron Resonance Deposition of Wide Bandgap a-SiC:HFilms Using Acetylene Under High Hydrogen Dilution,” J. Mater. Sci. Technol., vol. 13, no. 3, pp. 189-193, 1997.
  11. M.A. Fraga, M. Massi, I.C. Oliviera, H.S. Maciel, S.G.S. Filho and R.D. Mansano, “Nitrogen Doping of SiC Thin Films Deposited by RF Magnetron Sputtering,” J. Mater. Sci., vol. 19, no. 8, pp. 835-840, Sep. 2008.
    DOI: 10.1007/s10854-007-9487-y
  12. M. Künle, T. Kaltenbach, P. Lӧper, A. Hartel, S. Janz, O. Eibl and K-G. Nickel, “Si-rich a-SiC: H Thin Films: Structural and Optical Transformations during Thermal Annealing,” Thin Solid Films, vol. 519, no.1, pp. 151-157, Oct. 2010.
    DOI: 10.1016/j.tsf.2010.07.085
  13. J.K. Seo, Y-H. Joung, Y. Park and W.S. Choi, “Substrate Temperature Effect on the SiC Passivation Layer Synthesized by an RF Magnetron Sputtering Method,” Thin Solid Films, vol. 519, pp. 6654–6657, Aug. 2011.
    DOI: 10.1016/j.tsf.2011.04.052
  14. T. Chen, Y. Huang. D. Yang, R. Carius and F. Finger, “Development of Microcrystalline Silicon Carbide Window Layers by Hot-Wire CVD and their Applications in Microcrystalline Silicon Thin Film Solar Cells,” Thin Solid Films, vol. 519, no. 14, pp. 4523–4526, May 2011.
    DOI: 10.1016/j.tsf.2011.01.299
  15. В.И. Авраменко, Ю.В. Конобеев и А.М. Строкова “Нейтронные сечения для расчёта повреждающей дозы в реакторных материалах,” Атомная енергия, т. 56. но. 3, с. 139-141, 1984. (V.I. Avramenko, Yu.V. Konobeev and A.M. Strokova, “Neutron Cross-sections for Calculation of the Reactor Materials Damage Dose,” (Atomic Energy), vol. 56, no. 3, pp. 139-141, 1984.
  16. National Nuclear Data Center, Upton (NY), USA. Retrieved from: http://www.nndc.bnl.gov/
  17. M. Vetter et al., “Electronic Properties of Intrinsic and Doped Amorphous Silicon Carbide Films,” Thin Solid Films, vol. 511-512, pp. 290-294, Jul. 2006.
    DOI: 10.1016/j.tsf.2005.11.108