Silicon carbide (SiC) and nitrogen-doped silicon carbide (SiC(N)) films were deposited on p-type Si(100) substrates at various deposition conditions by means of plasma enhanced chemical vapor deposition (PECVD) technology using silane (SiH₄) methane (CH₄) and ammonium (NH₃) gas precursors. The concentration of elements in films was determined by RBS and ERD analytical method simultaneously. Chemical compositions were analyzed by FT-IR and Raman spectroscopy. The current-voltage (I-V) characteristics of structures before and after Xe ion and neutron irradiation were measured.

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