Volume 1, Issue 1 (April 2016)

Original research papers
Radiation Effects

THE INFLUENCE OF DEVICE GEOMETRY ON THE PARTIALLY DEPLETED SOI TRANSISTOR TID HARDNESS

Ivan Shvetsov-Shilovskiy, Anatoly Smolin, Pavel Nekrasov, Anastasia Ulanova, Alexander Nikiforov

Pages: 20-25

DOI: 10.21175/RadJ.2016.01.04

Received: 15 MAR 2015, Received revised: 15 MAY 2015, Accepted: 18 MAY 2015, Published Online: 28 APR 2016

Abstract | References | Full Text (PDF)

The research is focused on the differences in radiation behavior for transistors of different geometry, body tie contact types, device layer thickness and biasing.
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